Shin-Etsu化学公司为增强半导体性能开发300毫米GAN基底。 Shin-Etsu Chemical to develop 300-mm GaN substrate for enhanced semiconductor performance.

Shin-Etsu化学有限公司准备开发一个QSTTM基质,用于300毫米硝酸铵(GaN)应用。 Shin-Etsu Chemical Co., Ltd. is set to develop a QST™ substrate designed for 300-mm gallium nitride (GaN) applications. 这一创新旨在提高半导体装置的性能和效率,反映出公司致力于在半导体部门推进技术。 This innovation aims to enhance the performance and efficiency of semiconductor devices, reflecting the company's commitment to advancing technology in the semiconductor sector.