电动汽车引力逆变器的第四代SiC MOSFET技术,以提高功率效率,密度和强度为目标. STMicroelectronics launches 4th-gen SiC MOSFET tech for EV traction inverters, targeting power efficiency, density, and robustness.

STMCROETOS已推出其第四代碳化硅(SiC)MOSFET技术,旨在提高电动车辆引力转换器的电效率、密度和坚固度。 STMicroelectronics has launched its fourth-generation silicon carbide (SiC) MOSFET technology, aimed at improving power efficiency, density, and robustness for electric vehicle (EV) traction inverters. 750V级合格,预计到2025年将达到1 200V级。 The 750V class is qualified, with 1200V expected by Q1 2025. 该技术还支持高功率工业应用,提高性能和降低EV的重量。 The technology also supports high-power industrial applications, enhancing performance and reducing weight in EVs. ST计划通过2027年进一步创新,推动大规模采用电动流动和可持续性。 ST plans further innovations through 2027 to drive mass adoption of electric mobility and sustainability.