帕拉光公司推出了新的SiC MOSFET,其可用于数据中心和工业用途. Para Light launches new SiC MOSFETs with improved thermal stability and efficiency for data centers and industrial use.

帕拉光已推出其ThermaFlat SiC MOSFET,声称突破性的热性能与稳定的电阻从-25°C到+125°C. Para Light has launched its ThermaFlat SiC MOSFETs, claiming breakthrough thermal performance with stable on-resistance from -25°C to +125°C. 650V和1200V型号的电阻增加最小,降低冷却需求并提高效率. The 650V and 1200V models show minimal resistance increase, reducing cooling needs and boosting efficiency. 通过使用TO-247-4包装中的凯尔文源引脚, 他们将切换损失降低了高达35%. Using a Kelvin source pin in a TO-247-4 package, they cut switching losses by up to 35%. 这些新设备针对数据中心电源,工业驱动器和UPS系统,标志着Para Light进入SiC MOSFET市场的入口,旨在为功率电子可靠性和效率设定新的标准. Targeted at data center power supplies, industrial drives, and UPS systems, the new devices mark Para Light’s entry into the SiC MOSFET market, aiming to set a new standard for power electronics reliability and efficiency.