中国敦促国家努力在2030年前开发先进平刻技术，尽管美国技术限制严格。 China urges national effort to develop advanced lithography by 2030 amid U.S. tech restrictions.

中国半导体领导人敦促全国统一努力,到2030年开发先进的平面印刷系统,以创建国内替代ASML的系统。 Chinese semiconductor leaders are urging a unified national effort to develop advanced lithography systems by 2030, aiming to create a domestic alternative to ASML. 他们引用美国对芯片技术的限制、中国工业的支离破碎、EUV平面印刷、EDA软件和关键材料方面的差距作为关键挑战。 They cite U.S. restrictions on chip tech, fragmentation in China’s industry, and gaps in EUV lithography, EDA software, and critical materials as key challenges. 虽然在个别构成部分方面取得了进展,但整合仍然是一个障碍。 While progress has been made in individual components, integration remains a hurdle. 这一呼吁与中国推动技术自力更生的呼声是一致的,政府支持的重点是研究协调和研究与开发平台。 The call aligns with China’s push for technological self-reliance, with government support emphasized for research coordination and R&D platforms.