ROHM和Oseme发射新的SIC MOSFET,以提高EVs、太阳能和能源系统的效率。 ROHM and onsemi launch new SiC MOSFETs for higher efficiency in EVs, solar, and energy systems.

ROHM已开始在托尔包中大规模生产其SCT40xxDL 硅碳化物 MOSFETs, 其热性能比标准到263-7L包高39%,最高为750伏压级,抗压等级从13m_至65m}。 ROHM has started mass production of its SCT40xxDLL silicon carbide MOSFETs in TOLL packages, offering 39% better thermal performance than standard TO-263-7L packages, with up to 750V voltage rating and on-resistances from 13mΩ to 65mΩ. 该装置设计用于诸如AI服务器、能源储存和太阳能转换器等高功率的紧凑应用,其足迹小26%,高2.3毫米。 Designed for compact, high-power applications like AI servers, energy storage, and solar inverters, the devices feature a 26% smaller footprint and 2.3mm height. 另外还通过2025年9月开始的分销商提供模拟模型。 Available through distributors starting September 2025, simulation models are also provided. 同时,Onsemi在T2Pak顶酷包中发射了650V和950V ElieSiC MOSFETs, 使直接热层联结能够改善冷却、降低温度、提高电动车辆、太阳能和能源储存系统的电密度。 Meanwhile, onsemi launched 650V and 950V ElieSiC MOSFETs in T2Pak top-cool packages, enabling direct heatsink coupling for improved cooling, reduced temperatures, and higher power density in electric vehicles, solar, and energy storage systems.