Toshiba发射紧凑、高效650VSIC MOSFETs、提高工业用电密度。 Toshiba launches compact, efficient 650V SiC MOSFETs, boosting power density for industrial uses.

Toshiba将4个新的650V硅碳化物(SiC) MOSFET(SISFET)引入了一套紧凑的DFN8x8型包件,与旧型号相比,将装置体积减少了90%以上。 Toshiba has introduced four new 650V silicon carbide (SiC) MOSFETs in a compact DFN8x8 package, reducing device volume by over 90% compared to older models. 这些适合诸如电力供应和光伏发电等工业用途的MOSFET, 大大减少了转换损失,并提高了电力密度。 These MOSFETs, suitable for industrial uses like power supplies and photovoltaic generators, significantly cut switching losses and improve power density. Toshiba的目标是通过这些进步提高设备的效率和发电能力。 Toshiba aims to enhance equipment efficiency and power capacity with these advancements.