中国的研究人员揭晓了POX, 闪存技术比当前方案快10000倍。 Researchers in China unveil PoX, a flash memory tech 10,000 times faster than current options.

中国福丹大学的研究人员发明了一种叫PoX的闪存技术,可以前所未有的速度以每400微秒1位的速度存储数据。 Researchers at Fudan University in China have created a new flash memory technology called PoX, which can store data at an unprecedented speed of one bit per 400 picoseconds. 这种非挥发性内存能够保留无功率数据,比当前闪存快约10 000倍,明显超过传统的挥发性内存类型,如SRAM和DRAM。 This non-volatile memory, capable of retaining data without power, is about 10,000 times faster than current flash memory and significantly outperforms traditional volatile memory types like SRAM and DRAM. 这一创新有可能使AI系统和消费电子产品的储存解决方案发生革命性变革,提供更快的操作和较低的电耗。 The innovation could potentially revolutionize storage solutions in AI systems and consumer electronics, offering faster operation and lower power consumption.