密歇根大学牵头执行一个750万美元的项目,开发先进的耐热碳化硅半导体。 University of Michigan leads a $7.5 million project to develop advanced heat-resistant silicon carbide semiconductors.

密歇根大学牵头实施一个750万美元的项目,开发耐热的碳化硅半导体,初步供资240万美元。 The University of Michigan leads a $7.5 million project to develop heat-resistant silicon carbide (SiC) semiconductors, with initial funding of $2.4 million. 该倡议旨在扩大美国航天局的技术,使SIC芯片的设计更易于利用,并推动在航空航天、国防、可再生能源和电动车辆方面的应用。 The initiative aims to scale up NASA's technology, making SiC chip design more accessible and advancing applications in aerospace, defense, renewable energy, and electric vehicles. 主要合作伙伴包括美国航天局、地球航空航空航天局、Ozark集成电路和沃尔夫斯韦德。 Key partners include NASA, GE Aerospace, Ozark Integrated Circuits, and Wolfspeed.