2024 IEDM: Kioxia 展示 OCTRAM, 高容量交叉 MRAM, 高级 3D 闪存。 2024 IEDM: Kioxia showcases OCTRAM, high-capacity Crosspoint MRAM, and advanced 3D flash memory.

Kioxia公司将在2024年在旧金山举行的IEEE国际电子设备会议上介绍其最新的半导体记忆技术。 Kioxia Corporation will present its latest semiconductor memory technologies at the IEEE International Electron Devices Meeting (IEDM) 2024 in San Francisco. 关键创新包括用于减少电力消耗的氧-半导体通道晶体管DRAM(OCTRAM),用于加强AI处理的高容量跨点磁体晶体管和用于提高可靠性和性能的先进的3D闪存。 Key innovations include Oxide-Semiconductor Channel Transistor DRAM (OCTRAM) for reduced power consumption, high-capacity Crosspoint MRAM for enhanced AI processing, and advanced 3D flash memory for improved reliability and performance. Kioxia旨在推动数据存储方面的进展,以支持数字转换和AI。 Kioxia aims to drive advancements in data storage to support digital transformation and AI.