东芝在日本建成功率半导体 300 毫米晶圆制造厂，标志着其多年投资计划的第一阶段。 Toshiba completes 300-mm wafer fabrication facility for power semiconductors in Japan, marking Phase 1 of a multi-year investment program.

东芝已在日本加贺东芝电子公司建成一座用于功率半导体的新型 300 毫米晶圆制造设施。 Toshiba has completed a new 300-mm wafer fabrication facility for power semiconductors at Kaga Toshiba Electronics Corporation in Japan. 这一里程碑标志着东芝多年投资计划第一阶段的启动。 This milestone marks the start of Phase 1 of Toshiba's multi-year investment program. 该设施具有抗震结构和冗余电源，并将采用可再生能源供电。 The facility features a seismic isolation structure, redundant power sources, and will be powered by renewable energy. 预计将于2024财年下半年开始量产，届时东芝功率半导体产能将比2021财年增加2.5倍。 Mass production is expected to begin in the second half of fiscal year 2024, increasing Toshiba's power semiconductor production capacity by 2.5 times compared to fiscal 2021.